Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN power semiconductors, today announced availability of two new SuperGaN\u00ae devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses. The new products will run on Transphorm\u2019s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35 mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1\u20192024.<\/p>\n
Transphorm\u2019s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in a wide range of data center, renewables, and broad industrial applications. As noted, the 4-lead configuration offers flexibility to users for further improved switching performance. In a hard-switched synchronous boost converter, the 35 mOhm SuperGaN 4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and by 27 percent at 100 kHz when compared to a SiC MOSFET device with a comparable on resistance.<\/p>\n
Transphorm\u2019s SuperGaN FETs are known for delivering differentiating advantages such as:<\/p>\n
The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:<\/p>\n